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Physics of the Solid State

, Volume 43, Issue 2, pp 380–385 | Cite as

Silicon interaction with the (0001) surface of La and Gd layers

  • A. Yu. Grigor’ev
  • O. V. Krupin
  • D. V. Vyalykh
  • Yu. S. Dedkov
  • A. M. Shikin
  • G. V. Prudnikova
  • V. K. Adamchuk
Low-Dimensional Systems and Surface Physics
  • 28 Downloads

Abstract

A study is reported on a system consisting of a Si layer on the surface of rare-earth metals (REMs), which is the reverse of a rare-earth metal on silicon, the system of current widespread interest. Interaction of silicon with the (0001) surface of trivalent La and Gd single-crystal layers grown on a W(110) surface is studied by Auger spectroscopy combined with layer-by-layer argon-ion etching of the system and photoelectron spectroscopy. It is found that silicon interacts with the La(0001) and Gd(0001) surfaces even at room temperature with the formation of silicide, but no mutual mixing of the silicon and substrate atoms occurs. When the Si/La(0001) and Si/Gd(0001) systems are heated at 400°C, silicon does not diffuse into the bulk of the metal substrate or to the REM/W(110) interface.

Keywords

Spectroscopy Silicon State Physics Auger Metal Substrate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK "Nauka/Interperiodica" 2001

Authors and Affiliations

  • A. Yu. Grigor’ev
    • 1
  • O. V. Krupin
    • 1
  • D. V. Vyalykh
    • 1
  • Yu. S. Dedkov
    • 1
  • A. M. Shikin
    • 1
  • G. V. Prudnikova
    • 1
  • V. K. Adamchuk
    • 1
  1. 1.Research Institute of Physics (Petrodvorets Branch)St. Petersburg State UniversityPetrodvoretsRussia

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