Abstract
A generalized expression is obtained for the recombination velocity in structures with spatially separated electrons and holes. One stage of this process is tunneling. Under certain assumptions the general model yields the Shockley-Read recombination model and the tunneling recombination model. It is shown that an induced recombination effect may be observed in tunnel-coupled regions. An expression is obtained for the current-voltage characteristic of a surface-barrier diode in which tunneling recombination takes place. The theoretical results are compared with an experiment carried out using surface-barrier structures formed on gallium arsenide and thin As2Se3 films.
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 118, No. 5, 2000, pp. 1222–1229.
Original Russian Text Copyright © 2000 by Bulyarskiœ, Grushko.
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Bulyarskii, S.V., Grushko, N.S. Generalized model of recombination in inhomogeneous semiconductor structures. J. Exp. Theor. Phys. 91, 1059–1065 (2000). https://doi.org/10.1134/1.1334996
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DOI: https://doi.org/10.1134/1.1334996