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Charge transfer in TlFeS2 and TlFeSe2

  • Semiconductors and Dielectrics
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Abstract

The temperature dependences of the conductivity and the thermoelectric coefficient in TlFeS2 and TlFeSe2 samples have been investigated in the temperature range 85–400 K. The variable-range hopping conduction has been established. It is found that the density of localized states N F near the Fermi level is 1.7×1018 and 3.3×1018 eV−1 cm−3, and the average hopping length R is 109 and 104 Å for TlFeS2 and TlFeSe2, respectively. The non-Arrhenius (activationless) behavior of the hopping conductivity is established in the temperature region T<200 K for TlFeS2 and T<250 K for TlFeSe2.

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Authors and Affiliations

  1. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Narimanova 33, Baku, 370143, Azerbaijan

    S. N. Mustafaeva, É. M. Kerimova & A. I. Dzhabbarly

Authors
  1. S. N. Mustafaeva
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  2. É. M. Kerimova
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  3. A. I. Dzhabbarly
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Translated from Fizika Tverdogo Tela, Vol. 42, No. 12, 2000, pp. 2132–2135.

Original Russian Text Copyright © 2000 by Mustafaeva, Kerimova, Dzhabbarly.

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Mustafaeva, S.N., Kerimova, É.M. & Dzhabbarly, A.I. Charge transfer in TlFeS2 and TlFeSe2 . Phys. Solid State 42, 2197–2199 (2000). https://doi.org/10.1134/1.1332139

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  • DOI: https://doi.org/10.1134/1.1332139

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