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Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formation threshold

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 18, Moscow, 103907, Russia

    V. G. Mokerov (Corresponding Member of the RAS), Yu. V. Fedorov, A. V. Guk, Kh. S. Pak, Yu. V. Khabarov & A. V. Danilochkin

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  1. V. G. Mokerov
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  2. Yu. V. Fedorov
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  3. A. V. Guk
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  4. Kh. S. Pak
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  5. Yu. V. Khabarov
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  6. A. V. Danilochkin
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__________

Translated from Doklady Akademii Nauk, Vol. 374, No. 5, 2000, pp. 615–619.

Original Russian Text Copyright © 2000 by Mokerov, Fedorov, Guk, Pak, Khabarov, Danilochkin.

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Mokerov, V.G., Fedorov, Y.V., Guk, A.V. et al. Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formation threshold. Dokl. Phys. 45, 523–527 (2000). https://doi.org/10.1134/1.1327322

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  • DOI: https://doi.org/10.1134/1.1327322

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