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Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold

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Translated from Doklady Akademii Nauk, Vol. 374, No. 4, 2000, pp. 478–480.

Original Russian Text Copyright © 2000 by Mokerov, Fedorov, Guk, Khabarov, Pak, Danilochkin.

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Mokerov, V.G., Fedorov, Y.V., Guk, A.V. et al. Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold. Dokl. Phys. 45, 512–514 (2000). https://doi.org/10.1134/1.1327318

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