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Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon

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Abstract

We have studied changes in the surface composition and photoluminescence spectrum of porous silicon (por-Si) during the ion-plasma etching of samples in an argon-oxygen gas mixture. This treatment leads to the passivation of the surface of quantum filaments by residual fluorine and the formation of silicon oxide. The source of fluorine atoms are HF molecules retained in the volume of pores upon the por-Si structure formation by chemical etching. Increase in the fluorine concentration is accompanied by the growth in intensity of the blue-green band and broadening of the red band in the photoluminescence spectrum of por-Si.

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Authors and Affiliations

  1. Ul’yanovsk State University, Ul’yanovsk, Russia

    B. M. Kostishko, A. V. Drozdov & A. E. Kostishko

  2. Copenhagen University, Fruebjergvej 3, DK-2100, Copenhagen, Denmark

    P. V. Shibaev

Authors
  1. B. M. Kostishko
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  2. A. V. Drozdov
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  3. P. V. Shibaev
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  4. A. E. Kostishko
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 20, 2000, pp. 59–66.

Original Russian Text Copyright © 2000 by B. Kostishko, Drozdov, Shibaev, A. Kostishko.

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Kostishko, B.M., Drozdov, A.V., Shibaev, P.V. et al. Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon. Tech. Phys. Lett. 26, 919–922 (2000). https://doi.org/10.1134/1.1321239

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  • DOI: https://doi.org/10.1134/1.1321239

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