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Current transfer processes in thin lutecium and terbium oxide films on silicon

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Abstract

The results of the experimental study of the current transfer processes in thin Lu2O3 and Tb2O3 films on silicon substrates are presented. It is shown that, depending on the experimental conditions, the process of either the thermionic-field or the over-barrier emission prevails. Illumination of the structure does not change the effective surface barrier height. The results presented may be important for the practical applications of rare earth oxide-based thin-film systems.

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Authors and Affiliations

  1. Saratov State University, Saratov, 410071, Russia

    Ya. G. Fedorenko, L. A. Otavina & S. V. Korenyuk

Authors
  1. Ya. G. Fedorenko
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  2. L. A. Otavina
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  3. S. V. Korenyuk
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 20, 2000, pp. 53–58.

Original Russian Text Copyright © 2000 by Fedorenko, Otavina, Korenyuk.

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Fedorenko, Y.G., Otavina, L.A. & Korenyuk, S.V. Current transfer processes in thin lutecium and terbium oxide films on silicon. Tech. Phys. Lett. 26, 916–918 (2000). https://doi.org/10.1134/1.1321238

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  • DOI: https://doi.org/10.1134/1.1321238

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