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Electronic excitations and luminescence in CsLiB6O10 crystals

  • Semiconductors and Dielectrics
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Abstract

The paper presents the results of a complex investigation into the dynamics of electronic excitations in the CsLiB6O10 crystal (CLBO) by low-temperature luminescence VUV spectroscopy with subnanosecond time resolution under photoexcitation by synchrotron radiation. Strong broad-band low-temperature photoluminescence (PL) of the CLBO crystal has been revealed. Data on the PL decay kinetics, time-resolved PL and PL excitation spectra, and reflectance spectra at 9.3 and 295 K are obtained. It is shown that the intrinsic PL of CsLiB6O10 in the 3.5-eV range is caused by radiative annihilation of self-trapped excitons. The channels of creation and decay of relaxed and unrelaxed excitons in cesium lithium borate are discussed. The band gap of CLBO is estimated as E g≈8.5 eV. A monotonic increase in the excitation efficiency of intrinsic CLBO luminescence at exciting photon energies above 19 eV is identified as the photon multiplication process.

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Translated from Fizika Tverdogo Tela, Vol. 42, No. 10, 2000, pp. 1800–1807.

Original Russian Text Copyright © 2000 by Ogorodnikov, Pustovarov, Kruzhalov, Isaenko, Kirm, Zimmerer.

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Ogorodnikov, I.N., Pustovarov, V.A., Kruzhalov, A.V. et al. Electronic excitations and luminescence in CsLiB6O10 crystals. Phys. Solid State 42, 1846–1853 (2000). https://doi.org/10.1134/1.1318875

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