Abstract
The evolution of the surface morphology of a pseudomorphic Ge film on Si upon irradiation with its low-energy (230 eV) ions during heteroepitaxy from molecular beam has been studied experimentally by reflection high-energy electron diffraction. It has been found that irradiation with a continuous ion beam leads to a decrease in the critical Ge film thickness at which a transition from two-dimensional layer-by-layer to three-dimensional growth takes place. Exposure to pulsed ion irradiation (0.5 s) at instants of time that correspond to a fractional surface coverage more than 0.5 enhances the reflection intensity, which corresponds to a decrease in the roughness of the growth surface.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 72, No. 3, 2000, pp. 190–194.
Original Russian Text Copyright © 2000 by Dvurechenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Zinovyev, Kudryavtsev, Smagina.
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Dvurechenskii, A.V., Zinovyev, V.A., Kudryavtsev, V.A. et al. Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam. Jetp Lett. 72, 131–133 (2000). https://doi.org/10.1134/1.1316815
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DOI: https://doi.org/10.1134/1.1316815