Abstract
A numerical model of a single-electron metal transistor is proposed based on a solution of the Poisson equation. The model provides a good agreement with experimental data on the current-voltage characteristics obtained at nonzero temperatures in the ambient medium.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 16, 2000, pp. 63–67.
Original Russian Text Copyright © 2000 by Abramov, Novik.
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Abramov, I.I., Novik, E.G. A single-electron transistor model based on a numerical solution of the poisson equation. Tech. Phys. Lett. 26, 726–728 (2000). https://doi.org/10.1134/1.1307826
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DOI: https://doi.org/10.1134/1.1307826