Skip to main content
Log in

Mechanisms of formation and charge states of intrinsic defects in lead telluride films

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

A crystallochemical model of the vapor-phase epitaxy of lead telluride films is suggested. The model is based on the simultaneous formation of singly-and doubly-charged Frenkel defects in the cationic sublattice. The results of numerical calculations based on this model are in good agreement with the known experimental data.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. N. Kh. Abrikosov and L. E. Shelimova, Semiconductor Materials Based on A IV B VI Compounds (Nauka, Moscow, 1975).

    Google Scholar 

  2. V. P. Zlomanov, P-T-X Diagrams of Two-Component Systems (Mosk. Gos. Univ., Moscow, 1980).

    Google Scholar 

  3. Yu. I. Ravich, B. A. Efimova, and I. A. Smirnov, Semiconducting Lead Chalcogenides (Nauka, Moscow, 1968; Plenum, New York, 1970).

    Google Scholar 

  4. N. J. Parada and G. W. Pratt, Phys. Rev. Lett. 22, 180 (1969).

    Article  ADS  Google Scholar 

  5. M. Schenk, H. Berger, and A. Kimakov, Cryst. Res. Technol. 23(1), 77 (1988).

    Google Scholar 

  6. D. M. Zayachuk and V. A. Shenderovs’kii, Ukr. Fiz. Zh. 36(11), 1692 (1991).

    Google Scholar 

  7. D. M. Freik, V. V. Prokopiv, A. V. Nych, et al., Mater. Sci. Eng. B 48, 226 (1997).

    Article  Google Scholar 

  8. A. Lopez-Otero, Appl. Phys. Lett. 26(8), 470 (1975).

    ADS  Google Scholar 

  9. F. A. Kröger, The Chemistry of Imperfect Crystals (Wiley, New York, 1964; Mir, Moscow, 1969).

    Google Scholar 

  10. T. S. Moss, G. J. Burrell, and B. Ellis, Semiconductor Opto-Electronics (Butterworths, London, 1973; Mir, Moscow, 1976).

    Google Scholar 

  11. A. M. Gas’kov, V. P. Zlomanov, and A. V. Novoselova, Izv. Akad. Nauk SSSR, Neorg. Mater. 15(8), 1476 (1979).

    Google Scholar 

  12. F. A. Kröger, J. Phys. Chem. Solids 26, 1717 (1965).

    Google Scholar 

  13. V. L. Vinetskii and G. A. Kholodar’, Statistical Interaction of Electrons and Holes in Semiconductors (Naukova Dumka, Kiev, 1969).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 15, 2000, pp. 6–11.

Original Russian Text Copyright © 2000 by M. Ruvinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Freik, B. Ruvinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Prokopiv.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ruvinskii, M.A., Freik, D.M., Ruvinskii, B.M. et al. Mechanisms of formation and charge states of intrinsic defects in lead telluride films. Tech. Phys. Lett. 26, 647–649 (2000). https://doi.org/10.1134/1.1307801

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1307801

Keywords

Navigation