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Effect of the ion-beam-induced getters on the parameters of neutron-irradiated GaAs heterostructures

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Abstract

It was found that the negative influence of neutron irradiation on the parameters of Schottky-gate field-effect transistors based on epitaxial GaAs heterostructures can be markedly reduced by preliminarily implanting the heterostructures with Ar ions from the side of a substrate. The effect is explained by the farrange gettering of impurities and defects from the active transistor regions in the course of the neutron irradiation, which suppresses the formation of irradiation-induced deep energy levels.

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Authors and Affiliations

  1. Nizhegorodskii State University, Nizhnii Novgorod, Russia

    S. V. Obolenskii & V. D. Skupov

Authors
  1. S. V. Obolenskii
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  2. V. D. Skupov
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__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 15, 2000, pp. 1–5.

Original Russian Text Copyright © 2000 by Obolenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Skupov.

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Obolenskii, S.V., Skupov, V.D. Effect of the ion-beam-induced getters on the parameters of neutron-irradiated GaAs heterostructures. Tech. Phys. Lett. 26, 645–646 (2000). https://doi.org/10.1134/1.1307800

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  • DOI: https://doi.org/10.1134/1.1307800

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