Abstract
The effect of thermal treatment on the electrical properties of n-Si doped with the rare-earth element erbium during growth was studied for the first time. Annealing of the erbium-doped samples in air at 900–1200°C for 1–2 h, followed by quenching or slow cooling, leads to inhibition of the high-temperature defects.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 8, 2000, pp. 28–31.
Original Russian Text Copyright © 2000 by Vlasov, Nazyrov, Iminov, Khuda\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)berdiev.
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Vlasov, S.I., Nazyrov, D.É., Iminov, A.A. et al. Effect of heat treatment on the properties of erbium-doped silicon. Tech. Phys. Lett. 26, 328–329 (2000). https://doi.org/10.1134/1.1262833
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DOI: https://doi.org/10.1134/1.1262833