Abstract
The postimplantation distribution of defects and dopant atoms in silicon samples ion-implanted with the rare-earth element ytterbium was studied for the first time. The radiation damage profile coincides with the profile of implanted ytterbium.
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References
D. É. Nazyrov, G. S. Kulikov, and A. R. Regel’, Silicon Doped with Rare-Earth Elements. A Preprint of the Ioffe Physicotechnical Institute (Ioffe Physicotechnical Institute, Russian Academy of Sciences, Leningrad, 1977).
R. Sh. Malkovich and D. É. Nazyrov, Pis’ma Zh. Tekh. Fiz. 15, 38 (1989) [Sov. Tech. Phys. Lett. 15, 136 (1989)].
S. A. Goncharov and V. I. Sokolov, in Proceedings of the All-Union Conference on Radiation Defects in Metals, Alma-Ata, 1983, p. 9.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 8, 2000, pp. 24–27.
Original Russian Text Copyright © 2000 by Nazyrov, Goncharov, Suvorov.
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Nazyrov, D.É., Goncharov, S.A. & Suvorov, A.V. Silicon single crystals ion-doped with ytterbium. Tech. Phys. Lett. 26, 326–327 (2000). https://doi.org/10.1134/1.1262832
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DOI: https://doi.org/10.1134/1.1262832