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Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2×4)-reconstructed GaAs(001) surface

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Abstract

Oscillations of the intensity of mirror and fractional RHEED reflections during homoepitaxy on the GaAs(001)-(2×4) reconstructed surface were studied. A considerable difference was observed in the patterns of intensity variation for the mirror and the fractional (0 1/4) and (0 3/4) reflections corresponding to the α and β phases on the reconstructed surface. A kinetic scheme of elementary processes occurring on the Ga(001) surface upon the homoepitaxial growth initiation is proposed. The activation energy for the nucleation process was experimentally determined (5-eV). It is shown that the temperature dependence of the probability of critical nucleus formation is determined by the desorption of As2 dimers.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    Yu. G. Galitsyn, S. P. Moshchenko, A. I. Toropov & A. K. Bakarov

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  1. Yu. G. Galitsyn
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  2. S. P. Moshchenko
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  3. A. I. Toropov
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  4. A. K. Bakarov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 7, 2000, pp. 80–86.

Original Russian Text Copyright © 2000 by Galitsyn, Moshchenko, Toropov, Bakarov.

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Galitsyn, Y.G., Moshchenko, S.P., Toropov, A.I. et al. Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2×4)-reconstructed GaAs(001) surface. Tech. Phys. Lett. 26, 307–310 (2000). https://doi.org/10.1134/1.1262826

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  • DOI: https://doi.org/10.1134/1.1262826

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