Abstract
The principles of design and operation of a new avalanche photodiode structure are considered. The photodiode, comprises a silicon substrate, a semitransparent titanium gate separated from semiconductor by an insulating layer, and a drain electrode ensuring the surface transport of multiplicated charge carriers along the semiconductor—insulator interface. It is shown that multielement avalanche photodiode structures can be created, including charge-coupled-device matrices with the intrinsic photosignal gain above 104.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 7, 2000, pp. 75–79.
Original Russian Text Copyright © 2000 by Sadygov, Sule\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)manov, Bokova.
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Sadygov, Z.Y., Suleimanov, M.K. & Bokova, T.Y. Hypersensitive avalanche photodiode with surface transport of charge carriers. Tech. Phys. Lett. 26, 305–306 (2000). https://doi.org/10.1134/1.1262825
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DOI: https://doi.org/10.1134/1.1262825