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The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures

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Abstract

It was found that the hydrogenation of ion-doped n +-n-n i -GaAs structures in atomic hydrogen increases the rate of conductivity relaxation in the doped layers, decreases the effect of bias voltage applied to the n +-GaAs layer on the photoconductivity, and improves characteristics of the Schottky barrier transistors and the related integrated circuits. These phenomena are probably due to the formation of hydrogen complexes with electrically active centers in GaAs.

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Authors and Affiliations

  1. Institute of Semiconductor Devices, State Research and Production Enterprise, Tomsk, Russia

    V. A. Kagadei & Yu. V. Lilenko

  2. Institute of High-Current Electronics, Siberian Division, Russian Academy of Sciences, Tomsk, 634055, Russia

    L. S. Shirokova & D. I. Proskurovskii

Authors
  1. V. A. Kagadei
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  2. Yu. V. Lilenko
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  3. L. S. Shirokova
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  4. D. I. Proskurovskii
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 7, 2000, pp. 1–7.

Original Russian Text Copyright © 2000 by Kagade\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Lilenko, Shirokova, Proskurovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Kagadei, V.A., Lilenko, Y.V., Shirokova, L.S. et al. The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures. Tech. Phys. Lett. 26, 269–271 (2000). https://doi.org/10.1134/1.1262814

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  • DOI: https://doi.org/10.1134/1.1262814

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