Abstract
An experiment on the stochastic resonance in a bistable circuit with a tunnel diode is reported. In contrast to previous studies, the signal-to-noise ratio was measured across the load resistance. An additional narrow peak is observed in the signal-to-noise ratio plotted as function of the noise intensity. A brief explanation of the effect is given.
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L. Gammaitoni, P. Hänggi, P. Jung, et al., Rev. Mod. Phys. 70, 223 (1998).
R. N. Mantegna and B. Spagnolo, Phys. Rev. E 49, R1792 (1994).
R. N. Mantegna and B. Spagnolo, Phys. Rev. Lett. 76, 563 (1996).
A. B. Gittsevich, A. A. Zaitsev, V. V. Mokryakov, et al., Handbook of Semiconductor Devices: RF and Pulse Diodes and Optoelectronic Devices [in Russian], Ed. by A. V. Golomedov (KUbK-a, Moscow, 1996).
S. A. Reshetnyak, J. Russ. Laser Res. 19, 175 (1998).
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 5, 2000, pp. 67–75.
Original Russian Text Copyright © 2000 by Kartashov, Kotov, Reshetnyak, Filimonov.
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Kartashov, V.M., Kotov, A.F., Reshetnyak, S.A. et al. Stochastic resonance in a tunnel diode circuit. Tech. Phys. Lett. 26, 211–214 (2000). https://doi.org/10.1134/1.1262794
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DOI: https://doi.org/10.1134/1.1262794