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p-GaSe-n-recrystallized InSe heterojunctions

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Abstract

The photoelectric properties are investigated of heterojunctions (HJ) manufactured by recrystallization of InSe on a GaSe substrate. Substantial narrowing of the band is observed In spectra of photoresponse of HJ as compared with the photoresponse of the p-GaSe-n-InSe HJ obtained without recrystallization of InSe, which is caused by the formation of a solid solution of In0.8Ga0.2Se. An analysis of the temperature dependences of the current-voltage characteristics of obtained HJs reveals that the mechanism of current flow through a potential barrier exhibits a tunneling-recombination behavior.

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Authors and Affiliations

  1. Institute of Problems of Materials Studies, National Academy of Sciences of Ukraine, Chernovtsy, Ukraine

    V. N. Katerinchuk, Z. D. Kovalyuk & V. M. Kaminskii

Authors
  1. V. N. Katerinchuk
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  2. Z. D. Kovalyuk
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  3. V. M. Kaminskii
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 2, 2000, pp. 19–22.

Original Russian Text Copyright © 2000 by Katerinchuk, Kovalyuk, Kaminski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\).

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Katerinchuk, V.N., Kovalyuk, Z.D. & Kaminskii, V.M. p-GaSe-n-recrystallized InSe heterojunctions. Tech. Phys. Lett. 26, 54–55 (2000). https://doi.org/10.1134/1.1262739

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  • DOI: https://doi.org/10.1134/1.1262739

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