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Deep diffusion doping of macroporous silicon

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Abstract

An investigation is made of the diffusion of boron and phosphorus impurities in macroporous silicon with a regular structure of deep cylindrical pores, for which through doping of the walls was achieved. The ∼150 μm layers obtained were quasiuniformly doped and had a planar diffusion front, and their electric parameters were very similar to those of the doped single crystal. It is demonstrated that deep diffusion of phosphorus may be used to fabricate n-n + structures.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    E. V. Astrova, V. B. Voronkov, I. V. Grekhov, A. V. Nashchekin & A. G. Tkachencko

Authors
  1. E. V. Astrova
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  2. V. B. Voronkov
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  3. I. V. Grekhov
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  4. A. V. Nashchekin
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  5. A. G. Tkachencko
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Additional information

Pis’ma Zh. Tekh. Fiz. 25, 72–79 (December 12, 1999)

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Astrova, E.V., Voronkov, V.B., Grekhov, I.V. et al. Deep diffusion doping of macroporous silicon. Tech. Phys. Lett. 25, 958–961 (1999). https://doi.org/10.1134/1.1262694

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  • DOI: https://doi.org/10.1134/1.1262694

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