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Phenomenological model of the anomalous behavior of the avalanche noise factor in metal-insulator-semiconductor structures

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Abstract

A model which explains the experimentally observed drop in the avalanche noise factor F with increasing values of the stationary mean carrier multiplication factor M = 〈\( \tilde M \) 〉 in metal-insulator-semiconductor (MIS) structures is proposed. The basis of the model is the retention of carriers at the interface due to trapping either in a potential well or on surface states. The results of the calculation correspond numerically to the experimental data.

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Authors and Affiliations

  1. Orion Scientific-Industrial Association State Unitary Enterprise, Moscow

    N. E. Kurochkin & V. A. Kholodnov

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  1. N. E. Kurochkin
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  2. V. A. Kholodnov
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Pis’ma Zh. Tekh. Fiz. 25, 70–76 (May 12, 1999)

Translated by P. Shelnitz

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Kurochkin, N.E., Kholodnov, V.A. Phenomenological model of the anomalous behavior of the avalanche noise factor in metal-insulator-semiconductor structures. Tech. Phys. Lett. 25, 369 (1999). https://doi.org/10.1134/1.1262485

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  • DOI: https://doi.org/10.1134/1.1262485

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