Abstract
It was established experimentally that, unlike the photoelectronic principle, the image conversion principle developed here can convert an image in a broader spectral range with a suitable choice of semiconductor material. For example, a device was fabricated with a sensitivity of 5 and 2 mA/W at the 2 and 2.5 μm wavelength, respectively.
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Pis’ma Zh. Tekh. Fiz. 25, 83–87 (January 26, 1999)
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Vezirov, K.N. Use of porous dielectric films for electron-optical image conversion. Tech. Phys. Lett. 25, 77–78 (1999). https://doi.org/10.1134/1.1262374
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DOI: https://doi.org/10.1134/1.1262374