Abstract
An investigation was made of the radiation resistance of the internal memory of programmable logic devices. It was established that the internal memory of CMOS devices shows enhanced sensitivity to ionizing radiation when their outputs are shorted together. Information stored in the internal memory of the devices is erased at an absorbed dose substantially below the level at which the device fails. It is suggested that this effect may be used as a method of erasing information.
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Pis’ma Zh. Tekh. Fiz. 24, 29–32 (November 26, 1998)
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Kotov, Y.A., Sokovnin, S.Y. & Skotnikov, V.A. Radiation resistance of the internal memory of programmable logic devices. Tech. Phys. Lett. 24, 879–880 (1998). https://doi.org/10.1134/1.1262300
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DOI: https://doi.org/10.1134/1.1262300