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Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn〉

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Abstract

It was observed that the photosensitivity limit and the increase in the photoresponse depend fairly strongly on uniaxial elastic deformation in compensated Si〈B, Mn〉 crystals.

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References

  1. M. K. Bakhadyrkhanov, Author’s Abstract of Doctoral Dissertation [in Russian], Leningrad (1982).

  2. P. I. Baranskii, V. P. Klochkov, and I. V. Potykevich, Semiconductor Electronics [in Russian], Naukova Dumka, Kiev (1973), 703 pp.

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  3. A. L. Polyakova, Deformation of Semiconductors and Semiconducting Devices [in Russian], Énergiya, Moscow (1981), 168 pp.

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  4. Kh. M. Iliev, Author’s Abstract of Dissertation for Candidate’s Degree [in Russian], Tashkent, (1991).

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Authors and Affiliations

  1. Tashkent State Technical University, Tashkent

    M. K. Bakhadyrkhanov, Kh. M. Iliev & Kh. F. Zikrillaev

Authors
  1. M. K. Bakhadyrkhanov
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  2. Kh. M. Iliev
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  3. Kh. F. Zikrillaev
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 23–28 (November 26, 1998)

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Bakhadyrkhanov, M.K., Iliev, K.M. & Zikrillaev, K.F. Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn〉. Tech. Phys. Lett. 24, 877–878 (1998). https://doi.org/10.1134/1.1262299

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  • DOI: https://doi.org/10.1134/1.1262299

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