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Adsorption-stimulated bifurcation transition in a silicon-porous-silicon system

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Abstract

It is shown that after a porous layer has been formed electrochemically on a silicon surface at elevated anode currents, the silicon-porous-silicon system is in a quasisteady nonequilibrium state from which it may be transferred under the influence of fairly weak adsorption effects.

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Authors and Affiliations

  1. M. V. Lomonosov State University, Moscow

    V. M. Demidovich, G. B. Demidovich, V. R. Karib’yants & S. N. Kozlov

Authors
  1. V. M. Demidovich
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  2. G. B. Demidovich
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  3. V. R. Karib’yants
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  4. S. N. Kozlov
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 30–34 (November 12, 1998)

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Demidovich, V.M., Demidovich, G.B., Karib’yants, V.R. et al. Adsorption-stimulated bifurcation transition in a silicon-porous-silicon system. Tech. Phys. Lett. 24, 842–843 (1998). https://doi.org/10.1134/1.1262286

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  • DOI: https://doi.org/10.1134/1.1262286

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