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Investigation of the thermal stability of picosecond gallium arsenide dynistor switches

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Abstract

The operation of GaAs n+-p-i-n 0-p + dynistor structures has been demonstrated experimentally under conditions of reversible avalanche breakdown at temperatures up to 200 °C with switching times remaining under 140 ps. A numerical simulation refined the influence of various parameters of the semiconductor on the temperature dependence of the switching characteristics.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    K. V. Evstigneev, V. I. Korol’kov & A. V. Rozhkov

Authors
  1. K. V. Evstigneev
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  2. V. I. Korol’kov
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  3. A. V. Rozhkov
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 73–78 (August 12, 1998)

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Evstigneev, K.V., Korol’kov, V.I. & Rozhkov, A.V. Investigation of the thermal stability of picosecond gallium arsenide dynistor switches. Tech. Phys. Lett. 24, 613–615 (1998). https://doi.org/10.1134/1.1262217

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  • DOI: https://doi.org/10.1134/1.1262217

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