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Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

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Abstract

Structures having a set of planes with submonolayer InAs inclusions in an AlGaAs matrix were fabricated and studied. Lasing was observed as a result of optical excitation. It is shown that lasing takes place via the ground state of excitons localized at InAs islands and may be achieved without external optical confinement of the active region by wide-gap layers of lower refractive index. The low threshold excitation density shows that these structures may be used to develop low-threshold injection lasers in the visible range, exciton waveguides, and self-contained microcavities.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, I. É. Kozin, M. V. Belousov & D. Bimberg

  2. Institute of Physics, St. Petersburg State University, Petrodvorets

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, I. É. Kozin, M. V. Belousov & D. Bimberg

  3. Insitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, Germany

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, I. É. Kozin, M. V. Belousov & D. Bimberg

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  1. B. V. Volovik
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  2. A. F. Tsatsul’nikov
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  3. N. N. Ledentsov
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  4. M. V. Maksimov
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  5. A. V. Sakharov
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  6. A. Yu. Egorov
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  7. A. E. Zhukov
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  8. A. R. Kovsh
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  9. V. M. Ustinov
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  10. P. S. Kop’ev
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  11. Zh. I. Alferov
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  12. I. É. Kozin
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  13. M. V. Belousov
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  14. D. Bimberg
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 58–66 (July 26, 1998)

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Volovik, B.V., Tsatsul’nikov, A.F., Ledentsov, N.N. et al. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement. Tech. Phys. Lett. 24, 567–569 (1998). https://doi.org/10.1134/1.1262198

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  • DOI: https://doi.org/10.1134/1.1262198

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