Abstract
A study is made of a mechanism for the occurrence of a noise-induced kinetic transition in a thin amorphous semiconductor wafer.
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Pis’ma Zh. Tekh. Fiz. 24, 1–4 (July 26, 1998)
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Gudyma, Y.V. Stochastically induced hysteresis in optical carrier generation. Tech. Phys. Lett. 24, 541–542 (1998). https://doi.org/10.1134/1.1262185
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DOI: https://doi.org/10.1134/1.1262185