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Charge properties of aluminum oxide layers synthesized by molecular layering

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Abstract

An investigation was made of the charge and conducting properties of layers of insulator obtained by molecular layering in Si-Al2O3-Al structures. No charge trapping in the insulator is observed at 77 K when depleting voltages are applied to the structure.

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References

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Authors and Affiliations

  1. Physical Research Institute, St. Petersburg State University, St. Petersburg

    S. G. Sazonov, Z. N. Zuluev, V. E. Drozd & I. O. Nikiforova

Authors
  1. S. G. Sazonov
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  2. Z. N. Zuluev
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  3. V. E. Drozd
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  4. I. O. Nikiforova
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 58–63 (July 12, 1998)

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Sazonov, S.G., Zuluev, Z.N., Drozd, V.E. et al. Charge properties of aluminum oxide layers synthesized by molecular layering. Tech. Phys. Lett. 24, 525–526 (1998). https://doi.org/10.1134/1.1262179

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  • DOI: https://doi.org/10.1134/1.1262179

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