Abstract
The electroluminescent properties of quantum-well diode structures on staggered type-II heterojunctions in the InAs/GaSb system, obtained by molecular-beam epitaxy on InAs substrates, are investigated. Electroluminescence is observed in the spectral range 3–4 μm at T=77 K. It is found that emission bands due to recombination transitions involving electrons from the size-quantization levels of both the self-matched quantum wells at the InAs/GaSb type-II heterojunction and of the square quantum wells in short-period superlattices.
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Pis’ma Zh. Tekh. Fiz. 24, 50–56 (June 26, 1998)
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Moiseev, K.D., Mel’tser, B.Y., Solov’ev, V.A. et al. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions. Tech. Phys. Lett. 24, 477–479 (1998). https://doi.org/10.1134/1.1262152
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DOI: https://doi.org/10.1134/1.1262152