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Influence of a methane atmosphere on the temperature dependence of the conductivity of polycrystalline silicon films

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Abstract

The possibility of using polycrystalline silicon films in gas sensors is investigated. An analysis is made of the influence of a small quantity of methane admitted into the surrounding medium on the temperature dependence of the layer resistivity of films doped with acceptor impurities. It is established that the resistivity increases appreciably in the temperature range between 470 and 500°.

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Authors and Affiliations

  1. N. I. Lobachevskii State University, Nizhnii Novgorod

    V. N. Shabanov & D. V. Shengurov

Authors
  1. V. N. Shabanov
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  2. D. V. Shengurov
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Pis’ma Zh. Tekh. Fiz. 24, 16–19 (May 26, 1998)

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Shabanov, V.N., Shengurov, D.V. Influence of a methane atmosphere on the temperature dependence of the conductivity of polycrystalline silicon films. Tech. Phys. Lett. 24, 377–378 (1998). https://doi.org/10.1134/1.1262129

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  • DOI: https://doi.org/10.1134/1.1262129

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