Abstract
A theoretical description is given of an experimentally established dependence which determines the interrelation between the resistance of a semiconductor structure in weak electric fields and the characteristics of Gunn oscillators. This experimentally established dependence is of considerable practical value since it can be used to predict the main characteristics of diode microwave oscillators using easily measured parameters of dc diodes.
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Pis’ma Zh. Tekh. Fiz. 24, 1–7 (May 26, 1998)
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Usanov, D.A., Skripal, A.V. & Babayan, A.V. Interrelation between the resistance of Gunn diodes in weak electric fields and the characteristics of oscillators based on them. Tech. Phys. Lett. 24, 371–373 (1998). https://doi.org/10.1134/1.1262127
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DOI: https://doi.org/10.1134/1.1262127