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Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

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Abstract

Graded-index p-n InAsSb/InAsSbP/InAs structures capable of emitting at the maximum of the spectral curve up to 5.4 μm with a half-width of ∼26 meV (∼0.6 μm) without cooling have been fabricated and studied. This is the longest-wavelength radiation obtained at room temperature in III–V structures grown by liquid-phase epitaxy and the band is the narrowest obtained for semiconductor spontaneous radiation sources.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, St. Petersburg

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’ & G. N. Talalakin

Authors
  1. M. Aidaraliev
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  2. N. V. Zotova
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  3. S. A. Karandashev
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  4. B. A. Matveev
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  5. M. A. Remennyi
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  6. N. M. Stus’
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  7. G. N. Talalakin
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 88–94 (March 26, 1998)

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Aidaraliev, M., Zotova, N.V., Karandashev, S.A. et al. Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy. Tech. Phys. Lett. 24, 243–245 (1998). https://doi.org/10.1134/1.1262071

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  • DOI: https://doi.org/10.1134/1.1262071

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