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Electronic spectrum of Bi2Sr2CaCu2O8 near the fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy

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Abstract

The structure of the spectrum of the partial density of filled states of Bi2Sr2CaCu2O8 in the range E b<4 eV, obtained by ultraviolet (hv=8.43 eV) photoelectron spectroscopy was compared with that calculated by the strong coupling method. The results of the calculations agree with the experimental results in the range of binding energies 1<E b <4 eV. Analysis of the evolution of the spectra under thermal and phototreatment in ultrahigh vacuum and in oxygen reveals that oxygen atoms from Cu-O planes possess the highest mobility in the lattice and the surface of the single crystal is formed by Bi-O planes.

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Authors and Affiliations

  1. Physics Scientific-Research Institute, St. Petersburg State University, St. Petersburg

    A. M. Aprelev & A. A. Lisachenko

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  1. A. M. Aprelev
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  2. A. A. Lisachenko
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Pis’ma Zh. Tekh. Fiz. 24, 69–74 (February 12, 1998)

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Aprelev, A.M., Lisachenko, A.A. Electronic spectrum of Bi2Sr2CaCu2O8 near the fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy. Tech. Phys. Lett. 24, 112–114 (1998). https://doi.org/10.1134/1.1262015

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  • DOI: https://doi.org/10.1134/1.1262015

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