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Activation energy for the formation of oxygen vacancies in undoped nonstoichiometric indium oxide films

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Abstract

An analysis is made of the temperature dependence of the electrical conductivity of undoped nonstoichiometric indium oxide films. Activation energies are obtained for the formation of oxygen vacancies and for the mobility of quasifree carriers.

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Authors and Affiliations

  1. Ulyanovsk State University, Ulyanovsk

    A. M. Orlov, B. M. Kostishko & L. I. Gonchar

Authors
  1. A. M. Orlov
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  2. B. M. Kostishko
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  3. L. I. Gonchar
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 1–5 (February 12, 1998)

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Orlov, A.M., Kostishko, B.M. & Gonchar, L.I. Activation energy for the formation of oxygen vacancies in undoped nonstoichiometric indium oxide films. Tech. Phys. Lett. 24, 81–82 (1998). https://doi.org/10.1134/1.1262004

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  • DOI: https://doi.org/10.1134/1.1262004

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