Abstract
The influence of annealing at 180 °C on the structure, critical temperature, and electrical resistivity of Y1Ba2Cu3O7−δ thin films has been investigated. It is shown that films grown at reduced temperatures are sensitive to this annealing, which can substantially alter these film parameters.
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Pis’ma Zh. Tekh. Fiz. 24, 55–58 (January 12, 1998)
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Drozdov, Y.N., Pavlov, S.A. & Parafin, A.E. Influence of low-temperature annealing on the properties of Y1Ba2Cu3O7−δ thin films. Tech. Phys. Lett. 24, 24–25 (1998). https://doi.org/10.1134/1.1261978
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DOI: https://doi.org/10.1134/1.1261978