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Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

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Abstract

The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantum-dot states at the 1.84 μm wavelength (77 K) was obtained for the first time at a threshold current density of 64 A/cm2.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, N. N. Ledentsov, A. V. Lunev, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul’nikov, B. V. Volovik, P. S. Kop’ev & Zh. I. Alferov

Authors
  1. V. M. Ustinov
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  2. A. R. Kovsh
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  3. A. E. Zhukov
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  4. A. Yu. Egorov
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  5. N. N. Ledentsov
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  6. A. V. Lunev
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  7. Yu. M. Shernyakov
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  8. M. V. Maksimov
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  9. A. F. Tsatsul’nikov
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  10. B. V. Volovik
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  11. P. S. Kop’ev
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  12. Zh. I. Alferov
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 49–54 (January 12, 1998)

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Ustinov, V.M., Kovsh, A.R., Zhukov, A.E. et al. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm. Tech. Phys. Lett. 24, 22–23 (1998). https://doi.org/10.1134/1.1261977

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  • DOI: https://doi.org/10.1134/1.1261977

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