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“Semiconductor-metal” conductivity phase transition temperature in chalcogenide glassy semiconductors and overheating effect

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Abstract

It is shown that thin films of chalcogenide glassy semiconductors may repeatedly withstand short-term heating to temperatures substantially in excess of the “semiconductor-metal” transition temperature and the melting point Tm without being damaged.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    É. A. Lebedev & K. D. Tséndin

Authors
  1. É. A. Lebedev
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  2. K. D. Tséndin
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Pis’ma Zh. Tekh. Fiz. 23, 12–17 (November 26, 1997)

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Lebedev, É.A., Tséndin, K.D. “Semiconductor-metal” conductivity phase transition temperature in chalcogenide glassy semiconductors and overheating effect. Tech. Phys. Lett. 23, 863–864 (1997). https://doi.org/10.1134/1.1261913

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  • DOI: https://doi.org/10.1134/1.1261913

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