Abstract
A new system for a photoelectric converter is proposed, and its photoelectric properties are studied, using an n-CdO/a-C/p-Si heterostructure as an example. The distinguishing feature of the structure is that the broad-band insulating layer of SiO2 on the surface of the silicon is replaced by a narrow-band layer of amorphous carbon, while a layer of CdO is used as the upper electrode. It is shown that an increase of the short-circuit current because of impact ionization can be expected in such a heterostructure. The results of the paper show that it is worthwhile to use CdO films in practice as transparent electrodes.
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Pis’ma Zh. Tekh. Fiz. 23, 1–6 (November 12, 1997)
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Baranov, A.M., Malov, Y.A. & Tereshin, S.A. New type of photoelectric converter based on an n-CdO/a-C/p-Si heterostructure. Tech. Phys. Lett. 23, 817–819 (1997). https://doi.org/10.1134/1.1261894
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DOI: https://doi.org/10.1134/1.1261894