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Influence of sulfide treatment of profiled-interface Au-GaAs Schottky diodes on the polariton peak of the photoresponse

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Abstract

We discuss the feasibility of controlling the photosensitivity of metal/thin intrinsic-oxide/semiconductor surface-barrier structures under conditions of excitation of surface polaritons. These structures may be used as polarization-sensitive photodetectors.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Academy of Sciences of Ukraine, Kiev

    M. L. Dmitruk, O. I. Maeva, S. V. Mamykin & O. B. Yastrubchak

Authors
  1. M. L. Dmitruk
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  2. O. I. Maeva
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  3. S. V. Mamykin
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  4. O. B. Yastrubchak
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Additional information

Pis’ma Zh. Tekh. Fiz. 23, 52–57 (May 12, 1997)

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Dmitruk, M.L., Maeva, O.I., Mamykin, S.V. et al. Influence of sulfide treatment of profiled-interface Au-GaAs Schottky diodes on the polariton peak of the photoresponse. Tech. Phys. Lett. 23, 355–357 (1997). https://doi.org/10.1134/1.1261888

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  • DOI: https://doi.org/10.1134/1.1261888

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