Abstract
A series of experimental and theoretical investigations has been initiated for 6H-SiC samples sequentially implanted with high doses of N+(65 keV) + N+(120 keV)+Al+(100 keV)+Al+(160 keV) ions at temperatures between 200 and 800 °C. Nitrogen and carbon distribution profiles are measured by ERD and structural defect distributions are measured by Rutherford backscattering with channeling. A comparison between the experimental data and the results of computer simulation yields a physical model to describe the relaxation processes of the implanted SiC structure, where the entire implanted volume is divided into regions of different depth, having different guiding kinetics mechanisms.
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Pis’ma Zh. Tekh. Fiz. 23, 6–14 (August 26, 1997)
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Yankov, R.A., Voelskow, M., Kreissig, W. et al. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC. Tech. Phys. Lett. 23, 617–620 (1997). https://doi.org/10.1134/1.1261883
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DOI: https://doi.org/10.1134/1.1261883