Abstract
Results are presented of studies of the photoluminescence properties of epitaxial layers of AlxGa1−x As solid solutions grown by liquid-phase epitaxy with nonequilibrium crystallization achieved by ultrafast rates of cooling of the flux (V∼102–103 °C/s). The photoluminescence characteristics obtained indicate that the epitaxial layers are of high quality. It is also observed that when samples with x buff=0.5–0.55 are exposed to laser radiation of power density ∼1 kW/cm2 at a temperature of 77 K, the spectral composition of the radiation undergoes irreversible changes caused by the formation of an arsenic vacancy (V As)-donor impurity complex.
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Pis’ma Zh. Tekh. Fiz. 23, 8–13 (March 12, 1997)
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Abramov, A.V., Deryagin, A.G., Deryagin, N.G. et al. Photoluminescence properties of AlxGa1−x As epitaxial layers grown under conditions of ultrafast flux cooling. Tech. Phys. Lett. 23, 172–174 (1997). https://doi.org/10.1134/1.1261867
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DOI: https://doi.org/10.1134/1.1261867