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Possible formation of BaCeO3 during deposition of YBa2Cu3O7−x films on the surface of cerium oxide

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Abstract

Results are presented from an experimental study of the crystallographic parameters of (1102)Al2O3/(001)CeO2/(001)YBa2Cu3O7−x film heterostructures fabricated by cathode sputtering at high substrate temperatures T=600–800°C. It is shown that the main limitation on the temperature for deposition of a YBa2Cu3O7−x film on a CeO2 surface is due to the chemical interaction between YBa2Cu3O7−x and CeO2 to form a polycrystalline BaCeO3 layer.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow

    A. D. Mashtakov, I. M. Kotelyanskii, V. A. Luzanov, P. B. Mozhaev, G. A. Ovsyannikov & I. D. Bdikin

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  1. A. D. Mashtakov
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  2. I. M. Kotelyanskii
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  3. V. A. Luzanov
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  4. P. B. Mozhaev
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  5. G. A. Ovsyannikov
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  6. I. D. Bdikin
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Additional information

Pis’ma Zh. Tekh. Fiz. 23, 8–13 (October 12, 1997)

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Mashtakov, A.D., Kotelyanskii, I.M., Luzanov, V.A. et al. Possible formation of BaCeO3 during deposition of YBa2Cu3O7−x films on the surface of cerium oxide. Tech. Phys. Lett. 23, 738–740 (1997). https://doi.org/10.1134/1.1261814

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  • DOI: https://doi.org/10.1134/1.1261814

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