Abstract
A bistable device, in which switching is effected by an external voltage pulse and the stable states are stored as the color of the light emitted, is fabricated on the basis of an M-i-n-GaN light-emitting diode structure by depositing a layer of ZnTe on it. The properties of the device and its operating principle are presented.
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A. G. Drizhuk, M. V. Zaitsev, V. G. Sidorov, and D. V. Sidorov, Pis’ma Zh. Tekh. Fiz. 22(6), 67 (1996) [Tech. Phys. Lett. 22, 259 (1996)].
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A. G. Drizhuk, M. V. Zaitsev, V. G. Sidorov, and D. V. Sidorov, Pis’ma Zh. Tekh. Fiz. 22(13), 33 (1996) [Tech. Phys. Lett. 22, 533 (1996)].
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Pis’ma Zh. Tekh. Fiz. 23, 79–82 (October 26, 1997)
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Drizhuk, A.G., Sidorov, V.G., Sidorov, D.V. et al. ZnTe-GaN heterostructure switching device. Tech. Phys. Lett. 23, 809–810 (1997). https://doi.org/10.1134/1.1261810
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DOI: https://doi.org/10.1134/1.1261810