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CdS-GaN heterostructure photodetector with switching and memory

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Abstract

A photodetector having two stable states is fabricated. Switching is effected by a light pulse from an external source. The states are stored until a voltage is supplied to the photodetector. The design and properties of the photodetector are presented. The basic device is an M-i-n-GaN light-emitting diode structure.

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References

  1. A. G. Drizhuk, M. V. Zaitsev, V. G. Sidorov, and D. V. Sidorov, Pis’ma Zh. Tekh. Fiz. 22(6), 67 (1996) [Tech. Phys. Lett. 22, 259 (1996)].

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Authors and Affiliations

  1. Vologda Polytechnical Institute, Vologda, Russia

    A. G. Drizhuk, V. G. Sidorov, D. V. Sidorov & M. D. Shagalov

Authors
  1. A. G. Drizhuk
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  2. V. G. Sidorov
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  3. D. V. Sidorov
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  4. M. D. Shagalov
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Additional information

Pis’ma Zh. Tekh. Fiz. 23, 75–78 (October 26, 1997)

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Drizhuk, A.G., Sidorov, V.G., Sidorov, D.V. et al. CdS-GaN heterostructure photodetector with switching and memory. Tech. Phys. Lett. 23, 807–808 (1997). https://doi.org/10.1134/1.1261809

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  • DOI: https://doi.org/10.1134/1.1261809

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