Abstract
The properties of electrically active centers formed in Si-SiO2 structures as a result of argon ion implantation in the oxide layer are investigated, along with the processes of defect formation in the ion-implanted structures due to subsequent, less-energetic, external (e.g., field) influences. The investigations are carried out by electrophysical and electroluminescence methods in an electrolyte-insulator-semiconductor system at room temperature. It is established that argon ion implantation in the bulk of the oxide layer leads to the formation of electrically active centers outside the zone of localization of the implanted argon ions, and a model of their formation is proposed.
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Pis’ma Zh. Tekh. Fiz. 23, 26–31 (October 26, 1997)
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Baraban, A.P., Malyavka, L.V. Long-range effects in ion-implanted silicon-silicon-dioxide structures. Tech. Phys. Lett. 23, 786–787 (1997). https://doi.org/10.1134/1.1261801
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DOI: https://doi.org/10.1134/1.1261801