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Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide

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Abstract

It is shown that the temperatures of post-implantation annealing of radiation defects in silicon carbide may be reduced by pulsed photon treatment. With a correct choice of spectral composition and radiation energy, pulsed photon treatment is effective for annealing radiation defects through the selective absorption of photons at the corresponding levels. It is suggested that the annealing mechanism is ionizational (annealing under these experimental conditions cannot be explained by a thermal mechanism alone).

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References

  1. Yu. M. Tairov and V. F. Tsvetkov, in Handbook of Electrical Engineering Materials, Vol. 3, edited by Yu. V. Koritski, V. V. Pasynkov, and B. M. Tareev [in Russian], Énergatomizdat, Leningrad (1988), pp. 446–472.

    Google Scholar 

  2. V. V. Gusakov, A. P. Kovarskii, V. V. Popov, and B. E. Samorukov, Vopr. Radioeélektron. Ser. Tekh. Proizvod. Oborud. No. 1, 45 (1986).

  3. V. V. Bolotov, N. B. Pridachin, and L. S. Smirnov, Fiz. Tekh. Poluprovodn. 10, 566 (1976) [Sov. Phys. Semicond. 10, 338 (1976)].

    Google Scholar 

  4. A. V. Dburechenskii, G. A. Kachurin, E. V. Nidaev, and L. S. Smirnov, Pulsed Annealing of Semiconductor Materials [in Russian], Nauka, Moscow (1982).

    Google Scholar 

  5. V. V. Kapaev, Yu. V. Kopaev, and S. N. Molotkov, Mikroélektronika 12, 499 (1983).

    Google Scholar 

  6. I. G. Gverdtsiteli, A. B. Gerasimov, Z. V. Dzhibuti, and M. G. Pkhakadze, Poverkhnost’ No. 11, 132 (1985).

  7. A. G. Ital’yantsev, V. N. Mordkovich, and É. M. Temper, Fiz. Tekh. Poluprovodn. 18, 928 (1984) [Sov. Phys. Semicond. 18, 577 (1984)].

    Google Scholar 

  8. A. B. Gerasimov, Z. V. Dzhibuti, M. A. Kuprava, and M. G. Pkhakadze, Soobshch. Akad. Nauk Gruzii 145,No. 1, 67 (1992).

    Google Scholar 

  9. Z. B. Dzhibuti and N. D. Dolidze, Pis’ma Zh. Tekh. Fiz. 17(5), 41 (1991) [Sov. Tech. Phys. Lett. 17, 172 (1991)].

    Google Scholar 

  10. A. B. Gerasimov, N. D. Dolidze, R. M. Donina, B. M. Konovalenko, G. L. Ofengeim, and A. A. Tsertsvadze, Phys. Status Solidi A 70, 23 (1982).

    Google Scholar 

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Authors and Affiliations

  1. Iv. Dzhavakhishvili State University, Tbilisi

    Z. V. Dzhibuti, N. D. Dolidze, G. Sh. Narsiya & G. L. Éristavi

Authors
  1. Z. V. Dzhibuti
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  2. N. D. Dolidze
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  3. G. Sh. Narsiya
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  4. G. L. Éristavi
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Pis’ma Zh. Tekh. Fiz. 23, 26–29 (October 12, 1997)

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Dzhibuti, Z.V., Dolidze, N.D., Narsiya, G.S. et al. Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide. Tech. Phys. Lett. 23, 746–747 (1997). https://doi.org/10.1134/1.1261786

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  • DOI: https://doi.org/10.1134/1.1261786

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