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p-GaSe-n-Ga2S3 heterojunctions

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Abstract

Epitaxial layers of n-Ga2S3 have been grown on p-GaSe single crystals annealed in sulfur vapor. The possibility of fabricating p-GaSe-n-Ga2S3 heterojunctions is demonstrated.

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Authors and Affiliations

  1. Branch of the Institute of Problems in Materials Science, National Academy of Sciences of Ukraine, Chernovtsy

    M. Z. Kovalyuk, V. I. Vitkovskaya & M. V. Tovarnitskii

Authors
  1. M. Z. Kovalyuk
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  2. V. I. Vitkovskaya
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  3. M. V. Tovarnitskii
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Additional information

Pis’ma Zh. Tekh. Fiz. 23, 22–24 (May 26, 1997)

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Kovalyuk, M.Z., Vitkovskaya, V.I. & Tovarnitskii, M.V. p-GaSe-n-Ga2S3 heterojunctions. Tech. Phys. Lett. 23, 385 (1997). https://doi.org/10.1134/1.1261689

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  • DOI: https://doi.org/10.1134/1.1261689

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