Abstract
Results of an investigation of the influence of local pressure on the current-voltage characteristic of Au-Si〈Ni〉-Sb structures are presented for the first time. It is shown that nickel impurities in the silicon increase the total strain sensitivity n-Si〈Ni〉 structures.
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A. Abduraimov, S. Z. Zainabidinov, O. O. Mamatkarimov, and I. G. Tursunov, Uzbek. Fiz. Zh. No. 4, 68 (1992).
A. Abduraimov, S. Z. Zainabidinov, O. O. Mamatkarimov, Fiz. Tekh. Poluprovodn. 27, 1216 (1993) [Semiconductors 27, 671 (1993)].
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Pis’ma Zh. Tekh. Fiz. 23, 62–64 (May 12, 1997)
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Mamatkarimov, O.O. Influence of local pressure on the current-voltage characteristic of Au-Si〈Ni〉-Sb structures. Tech. Phys. Lett. 23, 360–361 (1997). https://doi.org/10.1134/1.1261680
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DOI: https://doi.org/10.1134/1.1261680