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Photopleochroism of oxide-p-InSe diode structures

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Abstract

A layered InSe crystal is used to fabricate a polarimetric photodetector. The heterostructure is formed in the plane perpendicular to the cleavage plane of the layers by thermal oxidation of the crystal substrate. The coefficient of photopleochroism of the oxide-p-InSe photodiode for 0.6328 nm light is 90%.

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Authors and Affiliations

  1. Branch of the Institute of Problems in Materials Science, Ukrainian National Academy of Sciences, Chernovtsy

    V. N. Katerinchuk & M. Z. Kovalyuk

Authors
  1. V. N. Katerinchuk
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  2. M. Z. Kovalyuk
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Pis’ma Zh. Tekh. Fiz. 23, 1–3 (May 26, 1997)

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Katerinchuk, V.N., Kovalyuk, M.Z. Photopleochroism of oxide-p-InSe diode structures. Tech. Phys. Lett. 23, 377 (1997). https://doi.org/10.1134/1.1261674

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  • DOI: https://doi.org/10.1134/1.1261674

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